Gregory E. Stillman
4Patents
4h-index
7Co-inventors
36Inventor score
Filing activity: Mar 24, 1995 → Sep 2, 1998
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5580382A | Process for forming silicon doped group III-V semiconductors with SiBr.sub. 4 | Electricity | 9 | Expired |
| US5656538A | Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6019840A | Process for forming deep level impurity undoped phosphorous containing semi-insulating epitaxial layers | Chemistry; Metallurgy | 7 | Expired |
| US6103614A | Hydrogen ambient process for low contact resistivity PdGe contacts to III-V materials | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.