Method of manufacturing semiconductor device with patterned lamination of Si film and metal film
US6020111A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 10, 1998 |
| Grant date | Feb 1, 2000 |
| Priority date | — |
| Expiry date | Mar 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28061
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, a first film essentially consisting of silicon is deposited on the surface of a semiconductor substrate. A second film essentially consisting of material having a proper etching selection ratio relative to tungsten is deposited on the first film. A third film essentially consisting of tungsten is deposited on the second film. A resist pattern is formed on the third film. The third film is etched and patterned to the surface of the second film, by using the resist pattern as a mask. The second film is etched to have the same shape as the third film. The first film is etched to have the same shape as the third film. After the step of patterning the third film and before the step of patterning the first film, the resist pattern is heated to a temperature of 80.degree. C. or higher, the semiconductor substrate is exposed in atmospheric air, and the resist pattern is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.