Method of producing a thin layer of semiconductor material
US6020252A · kind A · utility
452Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 1997 |
| Grant date | Feb 1, 2000 |
| Priority date | — |
| Expiry date | May 14, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin layer of semiconductor material is produced by implanting ions through a flat face of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face. The resulting wafer is then subjected to a thermal treatment step in order to achieve coalescence of the microcavities. During or following the thermal treatment, a thin layer is separated from the rest of the wafer by application of mechanical force.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.