Bernard Aspar
75Patents
23h-index
45Co-inventors
88Inventor score
Filing activity: Mar 31, 1997 → Apr 18, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6020252A | Method of producing a thin layer of semiconductor material | Emerging Cross-Sectional Technologies | 452 | Expired |
| US6103597A | Method of obtaining a thin film of semiconductor material | Electricity | 341 | Expired |
| US6809009B2 | Method of producing a thin layer of semiconductor material | Emerging Cross-Sectional Technologies | 319 | Expired |
| US7067396B2 | Method of producing a thin layer of semiconductor material | Emerging Cross-Sectional Technologies | 287 | Expired |
| US6303468A | Method for making a thin film of solid material | Emerging Cross-Sectional Technologies | 167 | Expired |
| US6756286B1 | Method for transferring a thin film comprising a step of generating inclusions | Emerging Cross-Sectional Technologies | 163 | Expired |
| US6225192A | Method of producing a thin layer of semiconductor material | Emerging Cross-Sectional Technologies | 147 | Expired |
| US6809044B1 | Method for making a thin film using pressurization | Emerging Cross-Sectional Technologies | 121 | Expired |
| US6946365B2 | Method for producing a thin film comprising introduction of gaseous species | Electricity | 109 | Expired |
| US6335258B1 | Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element | Emerging Cross-Sectional Technologies | 105 | Expired |
| US6190998A | Method for achieving a thin film of solid material and applications of this method | Electricity | 104 | Expired |
| US6204079A | Selective transfer of elements from one support to another support | Electricity | 60 | Expired |
| US6316333A | Method for obtaining a thin film in particular semiconductor, comprising a protected ion zone and involving an ion implantation | Electricity | 44 | Expired |
| US6403450B1 | Heat treatment method for semiconductor substrates | Electricity | 43 | Expired |
| US6756285B1 | Multilayer structure with controlled internal stresses and making same | Emerging Cross-Sectional Technologies | 43 | Expired |
| US7902038B2 | Detachable substrate with controlled mechanical strength and method of producing same | Emerging Cross-Sectional Technologies | 38 | Expired |
| US6197695A | Process for the manufacture of passive and active components on the same insulating substrate | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6362077B1 | Structure comprising a thin layer of material made up of conductive zones and insulating zones and a method of manufacturing such a structure | Electricity | 32 | Expired |
| US6465327B1 | Method for producing a thin membrane and resulting structure with membrane | Electricity | 31 | Expired |
| US7713369B2 | Detachable substrate or detachable structure and method for the production thereof | Emerging Cross-Sectional Technologies | 30 | Expired |
| US6974759B2 | Method for making a stacked comprising a thin film adhering to a target substrate | Electricity | 30 | Expired |
| US6821376B1 | Method for separating two elements and a device therefor | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6429094B1 | Treatment process for molecular bonding and unbonding of two structures | Emerging Cross-Sectional Technologies | 24 | Expired |
| US7498234B2 | Method of producing a thin layer of semiconductor material | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7029548B2 | Method for cutting a block of material and forming a thin film | Emerging Cross-Sectional Technologies | 17 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.