Interconnection system in a semiconductor device
US6020642A · kind A · utility
4Cited by
5References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 28, 1998 |
| Grant date | Feb 1, 2000 |
| Priority date | — |
| Expiry date | Jan 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a contact plug made of a material other than tungsten, i.e., Ti and TiN films, and an interconnection pattern made of sputtered tungsten and connected to a silicon substrate through the contact plug. The tungsten film has mainly (200) and (211) orientations on the top of the insulator film to reduce the resistivity of the tungsten and has mainly (110) orientation on the exposed regions of the Ti and TiN films at the top of the contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.