Semiconductor laser device
US6021148A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1997 |
| Grant date | Feb 1, 2000 |
| Priority date | — |
| Expiry date | Sep 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2206
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device in which a semiconductor laser emitting laser light and a light modulator modulating the laser light are integrated on a compound semiconductor substrate, includes a hole trapping layer for suppressing a reactive current that is generated when the semiconductor laser is operated and that does not contribute to laser oscillation. The hole trapping layer has a first region in the semiconductor laser and a second region in the light modulator. The hole trapping layer has a high carrier concentration and a low resistance and is discontinuous between the semiconductor laser and the light modulator, so that isolation between the laser and the modulator is increased, whereby a high-frequency signal applied to the light modulator is prevented from flowing through the hole trapping layer into the laser. Therefore, even when long-distance transmission is carried out using the semiconductor laser device, deterioration of transmitted wave is suppressed, resulting in satisfactory transmission characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.