Silicon and oxygen ion co-implantation for metallic gettering in epitaxial wafers
US6022793A · kind A · utility
46Cited by
11References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 21, 1997 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Oct 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel method of generating intrinsic gettering sites in epitaxial wafers employs co-implanting silicon and oxygen into a substrate of the wafer, annealing the substrate at a low temperature, and then depositing the epitaxial layer on a surface of the substrate. The epitaxial deposition acts as an in-situ anneal to form dislocation loops that act as gettering sites. Oxygen precipitate clusters form during the method, which clusters act to anchor the dislocation loops and prevent them from gliding to the wafer surface over time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.