Method of forming barrier layer for tungsten plugs in interlayer dielectrics
US6022800A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1998 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Apr 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of reducing tungsten plug loss in processes for fabrication for silicon-based semiconductor devices that include a tungsten plug in a high aspect ratio contact hole. The invention provides a barrier layer prepared by first forming a conformal layer of titanium nitride by chemical vapor deposition. Afterward, another film of titanium nitride is supplied by plasma vapor deposition. The barrier layer comprises at least these two films, and tungsten is then deposited to at least fill the high aspect ratio film-coated contact hole. Upon removal of excess tungsten as by wet etch back, the tungsten plug remains essentially intact, and any plug loss is insignificant in comparison with the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.