Hui Chen
6Patents
3h-index
19Co-inventors
50Inventor score
Filing activity: Mar 4, 1998 → Apr 7, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6762127B2 | Etch process for dielectric materials comprising oxidized organo silane materials | Electricity | 294 | Expired |
| US6022800A | Method of forming barrier layer for tungsten plugs in interlayer dielectrics | Electricity | 10 | Expired |
| US6096645A | Method of making IC devices having stable CVD titanium nitride films | Electricity | 4 | Expired |
| US9797060B2 | Nanostructured sapphire optical fiber sensing platform | Chemistry; Metallurgy | 1 | Active |
| US9500857B2 | Microelectromechanical system device having a hinge layer | Performing Operations; Transporting | 0 | Active |
| US6916700B1 | Mixed-mode process | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.