Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material
US6023082A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1998 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Jul 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.