Semiconductor transistor with stabilizing gate electrode
US6023086A · kind A · utility
29Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1997 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Sep 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a transistor (30, 51) having a gate electrode (15, 52) wherein the gate electrode (15, 52) has a highly resistive portion (24, 25, 55). The highly resistive portion (24, 25, 55) is integrated into the gate electrode (15, 52) and is coupled to the gate electrode (15, 52) using a via-less contact method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.