Lateral thin-film Silicon-On-Insulator (SOI) device having multiple zones in the drift region
US6023090A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1998 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Dec 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral MOS device on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region, and a drain region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and over at least a part of the lateral drift region adjacent the body region, with the gate electrode being insulated from the body region and drift region by an insulation region. In order to provide an optimum combination of low "on" resistance and high breakdown voltage, the lateral drift region is provided with a plurality of spaced-apart zones of the second conductivity type extending horizontally in a lateral direction from the body region toward the drain region and having a varying charge level in the lateral direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.