Mark Simpson
26Patents
15h-index
30Co-inventors
81Inventor score
Filing activity: Jun 28, 1995 → Oct 29, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6346451B1 | Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode | Electricity | 200 | Expired |
| US5634006A | System and method for ensuring QOS in a token ring network utilizing an access regulator at each node for allocating frame size for plural transmitting applications based upon negotiated information and priority in the network | Electricity | 150 | Expired |
| US6313489A | Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a device | Electricity | 131 | Expired |
| US5606521A | Electrically erasable and programmable read only memory with non-uniform dielectric thickness | Electricity | 60 | Expired |
| US6127703A | Lateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension region | Electricity | 58 | Expired |
| US9202783B1 | Selective antipad backdrilling for printed circuit boards | Electricity | 40 | Active |
| US6468878B1 | SOI LDMOS structure with improved switching characteristics | Electricity | 38 | Expired |
| US6314516A | Method and apparatus for configuring communications settings in a computer system | Electricity | 34 | Expired |
| US6310378A | High voltage thin film transistor with improved on-state characteristics and method for making same | Electricity | 33 | Expired |
| US7113418B2 | Memory systems and methods | Emerging Cross-Sectional Technologies | 32 | Expired |
| US9585259B1 | Apparatus and methods for placement of discrete components on internal printed circuit board layers | Electricity | 27 | Active |
| US6794719B2 | HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness | Electricity | 27 | Expired |
| US6023090A | Lateral thin-film Silicon-On-Insulator (SOI) device having multiple zones in the drift region | Electricity | 22 | Expired |
| US6028337A | Lateral thin-film silicon-on-insulator (SOI) device having lateral depletion means for depleting a portion of drift region | Electricity | 15 | Expired |
| US5969387A | Lateral thin-film SOI devices with graded top oxide and graded drift region | Electricity | 15 | Expired |
| US6221737A | Method of making semiconductor devices with graded top oxide and graded drift region | Electricity | 13 | Expired |
| US6927103B2 | Method and apparatus of terminating a high voltage solid state device | Electricity | 11 | Expired |
| US6232636A | Lateral thin-film silicon-on-insulator (SOI) device having multiple doping profile slopes in the drift region | Electricity | 8 | Expired |
| US6414365B1 | Thin-layer silicon-on-insulator (SOI) high-voltage device structure | Electricity | 8 | Expired |
| US8494871B2 | Decision support system for acute dynamic diseases | Physics | 6 | Active |
| US6642558B1 | Method and apparatus of terminating a high voltage solid state device | Electricity | 6 | Expired |
| US9185794B1 | Apparatus and methods for placement of discrete components on internal printed circuit board layers | Electricity | 5 | Active |
| US6362504B1 | Contoured nonvolatile memory cell | Electricity | 4 | Expired |
| US6847081B2 | Dual gate oxide high-voltage semiconductor device | Electricity | 2 | Expired |
| US7268046B2 | Dual gate oxide high-voltage semiconductor device and method for forming the same | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.