Robot blade for handling of semiconductor substrate
US6024393A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1996 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Nov 4, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S414/141
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The amount of particulate contamination produced due to rubbing between a semiconductor substrate and the robotic substrate handling blade has been greatly reduced by the use of specialized materials either as the principal material of construction for the semiconductor substrate handling blade, or as a coating upon the surface of the wafer handling blade. In particular, the specialized material must exhibit the desired stiffness at temperatures in excess of about 450.degree. C.; the specialized material must also have an abrasion resistant surface which does not produce particulates when rubbed against the semiconductor substrate. The abrasion resistant surface needs to be very smooth, having a surface finish of less than 1.0 micro inch, and preferably less than 0.2 micro inch. In addition, the surface must be essentially void-free. In the most preferred embodiments, the upper, top surface of the substrate handling blade is constructed from a dielectric material being smooth, non-porous, and wear-resistant. A preferred material for construction of the substrate handling blade is single crystal sapphire. Other single crystal materials, such as single crystal silicon and single crys…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.