Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination
US6024794A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1997 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Sep 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
By applying the method, the critical film thickness of a compound semiconductor layer is determined, and a semiconductor device having a compound semiconductor layer with an optimized film thickness excellent in emitting performance is manufactured. The relationship between film thickness of a compound semiconductor layer and photoluminescence (PL) corresponding to the film thickness is obtained by measurement, the film thickness where PL exhibits a peak is designated as critical film thickness. The semiconductor layer comprises II-VI group compound semiconductor layer containing at least cadmium. The relationship between the critical film thickness and cadmium composition ratio is obtained by measurement. An equation which approximates the relationship between the critical film thickness and cadmium composition ratio is formulated. When a semiconductor device is manufactured, a compound semiconductor layer is formed so as that the thickness of the layer is thinner than the critical film thickness determined from the equation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.