Passivation of oxide-compound semiconductor interfaces
US6025281A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1997 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Dec 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of passivating interface states of oxide-compound semiconductor interfaces using molecular, atomic, or isotopic species wherein said species are applied before oxide deposition in ultra-high vacuum, or during interruption of oxide deposition in ultra-high vacuum (preferentially after oxide surface coverage of a submonolayer, a monolayer, or a few monolayers), or during oxide deposition in ultra-high vacuum, or after completion of oxide deposition, or before or after any processing steps of the as deposited interface structure. In a preferred embodiment, hydrogen or deuterium atoms are applied to a Ga.sub.2 O.sub.3 --GaAs interface at some point before, during, or after oxide deposition in ultra-high vacuum, or before or after any processing steps of the as deposited interface structure, at any given and useful substrate temperature wherein the atomic species can be provided by any one of RF discharge, microwave plasma discharge, or thermal dissociation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.