Method for measuring epitaxial film thickness of multilayer epitaxial wafer
US6025596A · kind A · utility
10Cited by
2References
3Claims
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Key dates
| Filing date | Feb 5, 1998 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Feb 5, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/0625
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a measurement method for measuring the epitaxial film thickness of a multilayer epitaxial wafer, a reflectivity spectrum of a multilayer epitaxial wafer having at least two epitaxial layers of different electric characteristics is measured by using infrared radiation in a far infrared region of at least 500 cm.sup.-1 or less, and frequency-analysis is performed on the reflection spectrum thus obtained by a maximum entropy method, and the film thickness of each epitaxial layer is calculated on the basis of the analysis spectrum thus obtained.
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