Semiconductor device of SiC with insulating layer and a refractory metal nitride layer

US6025608A · kind A · utility

Assignee

• ABB RESEARCH LTD. · CH

Inventors

• Christopher Harris · Sollentuna, SE
• Erik Danielsson · Sundsvall, SE

Key dates

• Filing date: Nov 18, 1997
• Grant date: Feb 15, 2000
• Expiry date: Nov 18, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A semiconductor device comprises at least one semiconductor layer of SiC and a layer of a refractory metal nitride separated by an insulating layer located next to the SiC layer of SiO.sub.2. The insulating layer comprises two sub layers, namely a first sub layer of SiO.sub.2 next to the SiC layer and a second sub layer of Si.sub.3 N.sub.4 located between the first sub layer and the metal nitride layer.