Conductivity modulated MOSFET
US6025622A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1998 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Jun 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.