Nonvolatile memory cell

US6025626A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventor

• Georg Tempel · Zorneding, DE

Key dates

• Filing date: Mar 23, 1999
• Grant date: Feb 15, 2000
• Expiry date: Mar 23, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

The invention relates to a self-adjusted nonvolatile memory cell, in which a MOS transistor with source and drain regions is incorporated into the surface region of a semiconductor body. The floating gate and the control gate of the MOS transistor are accommodated, overlapping one another, in a recess trench, while the transistor channel is guided laterally in a surface region of the trench.