Method of making an active pixel sensor integrated with a pinned photodiode

US6027955A · kind A · utility

Assignee

• EASTMAN KODAK COMPANY · US

Inventors

• Paul P. Lee · Pittsford, US
• Robert M. Guidash · Rochester, US
• Teh-Hsuang Lee · Webster, US
• Eric G. Stevens · Rochester, US

Key dates

• Filing date: Dec 20, 1996
• Grant date: Feb 22, 2000
• Expiry date: Dec 20, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.