Process for defining a pattern using an anti-reflective coating and structure therefor
US6030541A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 1998 |
| Grant date | Feb 29, 2000 |
| Priority date | — |
| Expiry date | Jun 19, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pattern in a surface is defined by providing on the surface a hard mask material; depositing an anti-reflective coating on the hard mask material; applying a photoresist layer on the anti-reflective coating; patterning the photoresist layer, anti-reflective layer and hard mask material; and removing the remaining portions of the photoresist layer and anti-reflective layer; and then patterning the substrate using the hard mask as the mask. Also provided is a structure for defining a pattern in a surface which comprises a surface having a hard mask material thereon; an anti-reflective coating located on the hard mask material; and a photoresist located on the anti-reflective coating. Also provided is an etchant composition for removing the hard mask material which comprises an aqueous composition of HF and chlorine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.