Inventor · Jericho, VT, US

James W. Adkisson

164Patents
21h-index
151Co-inventors
93Inventor score

Filing activity: Jan 15, 1982 → Jun 20, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US6350653B1 Embedded DRAM on silicon-on-insulator substrate Electricity 149 Expired
US6590259B2 Semiconductor device of an embedded DRAM on SOI substrate Electricity 140 Expired
US6483156B1 Double planar gated SOI MOSFET structure Electricity 139 Expired
US6797553B2 Method for making multiple threshold voltage FET using multiple work-function gate materials Electricity 115 Expired
US6472258B1 Double gate trench transistor Electricity 109 Expired
US6030541A Process for defining a pattern using an anti-reflective coating and structure therefor Electricity 67 Expired
US7240322B2 Method of adding fabrication monitors to integrated circuit chips Electricity 59 Expired
US7781781B2 CMOS imager array with recessed dielectric Electricity 50 Active
US7193289B2 Damascene copper wiring image sensor Electricity 41 Expired
US8227844B2 Low lag transfer gate device Electricity 41 Active
US4452543A High speed printer with multiple paper paths Performing Operations; Transporting 38 Expired
US7622364B2 Bond pad for wafer and package for CMOS imager Electricity 38 Active
US9054671B2 Tunable filter structures and design structures Emerging Cross-Sectional Technologies 37 Active
US7524694B2 Funneled light pipe for pixel sensors Physics 32 Active
US6660596B2 Double planar gated SOI MOSFET structure Electricity 28 Expired
US7829945B2 Lateral diffusion field effect transistor with asymmetric gate dielectric profile Electricity 28 Active
US7759755B2 Anti-reflection structures for CMOS image sensors Emerging Cross-Sectional Technologies 27 Active
US7482675B2 Probing pads in kerf area for wafer testing Electricity 26 Expired
US7772028B2 CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom Electricity 25 Active
US7205627B2 Image sensor cells Electricity 24 Expired
US6448590B1 Multiple threshold voltage FET using multiple work-function gate materials Electricity 23 Expired
US6261895A Polysilicon capacitor having large capacitance and low resistance and process for forming the capacitor Electricity 21 Expired
US8957405B2 Graphene field effect transistor Electricity 20 Active
US6403393B1 Device having integrated optical and copper conductors and method of fabricating same Physics 20 Expired
US6960744B2 Electrically tunable on-chip resistor Electricity 19 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.