Method for microwave plasma substrate heating
US6030666A · kind A · utility
248Cited by
12References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1997 |
| Grant date | Feb 29, 2000 |
| Priority date | — |
| Expiry date | Mar 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of microwave heating of a substrate in a plasma processing chamber wherein a heatup gas is supplied into the processing chamber, the heatup process gas is energized with microwave power to heat an exposed surface of the substrate, a reactant gas is supplied into the processing chamber and the reactant gas is energized into a plasma gas state to process the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.