Process for generating a space in a structure

US6030900A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Thomas Grassl · Freising, DE
• Manfred Engelhardt · Feldkirchen-Westerham, DE

Key dates

• Filing date: Feb 4, 1998
• Grant date: Feb 29, 2000
• Expiry date: Feb 4, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02271
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a method for the production of a spacer layer in a structure in a first step a structure is produced by anisotropic dry etching, and in a further step an oxide layer is deposited with an organic silicon precursor at a pressure of p=0.2-1 bar and a temperature of 200.degree. C. to 400.degree. C.