Hybrid sensor pixel architecture

US6031248A · kind A · utility

Assignee

• Xerox Corporation · US

Inventors

• Ping Mei · Palo Alto, US
• Andrew J. Moore · Dallas, US
• Raj B. Apte · Palo Alto, US
• Steven E. Ready · Los Altos, US
• Robert A. Street · Palo Alto, US
• James B. Boyce · Los Altos, US

Key dates

• Filing date: Apr 28, 1998
• Grant date: Feb 29, 2000
• Expiry date: Apr 28, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/18

Abstract

A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein.