CMOS semiconductor device having boron doped channel
US6031249A · kind A · utility
148Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1997 |
| Grant date | Feb 29, 2000 |
| Priority date | — |
| Expiry date | Jul 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0225
Abstract
A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity element is subjected to redistribution, and the concentration of the impurity element in the principal surface of the active layer is minimized. The precise control of threshold voltage is enabled by the impurity element that is present in a trace quantity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.