High temperature resonant integrated microstructure sensor
US6031944A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 1997 |
| Grant date | Feb 29, 2000 |
| Priority date | — |
| Expiry date | Dec 30, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A very high temperature microbeam sensor of a resonant integrated microstructure having an electrostatic beam driver and an optical fiber pick-up for sensed light from the beam. The high temperature sensor has no components that are vulnerable to temperatures up to 600 degrees C. Associated components for detection, processing and driving are remote from the sensor environment. By using different materials in the beam assembly, such as tungsten for the beam, and sapphire for the substrate and the shell, the sensor can withstand temperatures up to 1000 degrees C. Also, optical fiber may be used for long distance connections between processing electronics and the driver in the sensing device, by locating a photo detector just outside the very or ultra high temperature sensing environment, and then using optical fiber for sending long distance signals from the processor to the driver photo detector, for eliminating electrical signal-to-noise problems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.