Fabrication process of Ni-Mn spin valve sensor
US6033491A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 3, 1997 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Sep 3, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49034
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A spin valve (SV) sensor having a Ni-Mn antiferromagnetic (AFM) layer, a pinned layer, a free layer and a spacer layer disposed between said free and pinned layers. The pinned layer is formed over and in contact with the antiferromagnetic (AFM) Ni-Mn layer where the combination of the AFM and pinned layers is first annealed before depositing the rest of the SV layers. Carrying out the annealing process of the combination of the AFM and pinned layers prior to deposition of the rest of the SV layers provides the exchange coupling field necessary to pin the pinned layer while avoiding thermal degradation of the SV sensor giant magnetoresistive effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.