Method for manufacturing dielectric capacitor, dielectric memory device
US6033953A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1997 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Dec 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric capacitor is provided which has a reduced leakage current. The surface of a first electrode (38) of the capacitor is electropolished and a dielectric film (40) and a second electrode (37) are successively laminated on it. The convex parts pointed end (38a) existing on the surface of the first electrode is very finely polished uniformly by dissolving according to electropolishing, a spherical curved surface in which the radius of curvature has been enlarged is formed, and the surface of the first electrode is flattened. Therefore, concentration of electrolysis can be prevented during the operation at the interface of the first electrode and the dielectric film, and the leakage current can be reduced considerably.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.