Method for forming a shallow trench isolation structure
US6033968A · kind A · utility
7Cited by
5References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 29, 1999 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Mar 29, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a shallow trench isolation structure. A mask layer having an opening is formed over a substrate to pattern a shallow trench. A sloped spacer is formed on the sidewalls of the opening. The mask layer and the spacer are used as a hard mask, and a portion of the substrate is removed by anisotropic etching to form a shallow trench isolation structure. The sloped sidewalls of the shallow trench isolation structure and the substrate surface intersect at an obtuse angle. Therefore, the structure prevents stress and avoids leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.