United Integrated Circuits Corp
39Patents
0Active
39Granted
36Portfolio score
Filing activity: Aug 6, 1997 → May 9, 2000
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6083828A | Method for forming a self-aligned contact | Electricity | 34 | Expired |
| US6100573A | Structure of a bonding pad for semiconductor devices | Electricity | 24 | Expired |
| US6066550A | Method of improving selectivity between silicon nitride and silicon oxide | Electricity | 17 | Expired |
| US6132078A | Slurry providing system | Performing Operations; Transporting | 15 | Expired |
| US5998278A | Method of fabricating shallow trench isolation structures using a oxidized polysilicon trench mask | Electricity | 14 | Expired |
| US6103608A | Method of forming a contact window | Electricity | 13 | Expired |
| US6074950A | Alignment strategy for asymmetrical alignment marks | Electricity | 11 | Expired |
| US6048762A | Method of fabricating embedded dynamic random access memory | Electricity | 11 | Expired |
| US6174813A | Dual damascene manufacturing process | Electricity | 9 | Expired |
| US6190807A | Mask compatible with different steppers | Physics | 9 | Expired |
| US6188243A | Input/output circuit with high input/output voltage tolerance | Electricity | 9 | Expired |
| US6207498A | Method of fabricating a coronary-type capacitor in an integrated circuit | Electricity | 8 | Expired |
| US6077761A | Method for fabricating a transistor gate with a T-like structure | Electricity | 7 | Expired |
| US6084240A | Ion implanter | Electricity | 7 | Expired |
| US6033968A | Method for forming a shallow trench isolation structure | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6136698A | Method of increasing contact area of a contact window | Electricity | 7 | Expired |
| US6071094A | Photoresist dispense pump | Physics | 5 | Expired |
| US6051464A | Method for fabricating a capacitor of a DRAM with an HSG layer | Electricity | 5 | Expired |
| US6087252A | Dual damascene | Electricity | 5 | Expired |
| US6238977A | Method for fabricating a nonvolatile memory including implanting the source region, forming the first spacers, implanting the drain regions, forming the second spacers, and forming a source line on the source and second spacers | Electricity | 4 | Expired |
| US6121095A | Method for fabricating gate oxide | Electricity | 4 | Expired |
| US6030872A | Method of fabricating mixed-mode device | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6198535A | Wafer alignment system | Physics | 4 | Expired |
| US6177700A | Capacitor in a dynamic random access memory | Electricity | 3 | Expired |
| US5990523A | Circuit structure which avoids latchup effect | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.