Reading circuit for nonvolatile analog memories, in particular flash-eeprom memories, with direct and constant current threshold voltage reading
US6034888A · kind A · utility
16Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1999 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Jan 27, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C27/005
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The reading circuit comprises a current source, which, via a current reflection circuit, supplies a constant predetermined current to a cell to be read, an operational amplifier with a non-inverting input connected to the drain terminal of the cell, and an output connected to the gate terminal of the cell. The source terminal of the cell is connected to ground. Thereby the output voltage of the operational amplifier supplies directly (at the set current) the threshold voltage of the cell, and the drain terminal of the cell is biased to a positive voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.