Hermetic sealing of a substrate of high thermal conductivity using an interposer of low thermal conductivity
US6037193A · kind A · utility
11Cited by
16References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1997 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Jan 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/163
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates generally to a new process for hermetically sealing of a high thermally conductive substrate, such as, an aluminum nitride substrate, using a low thermally conductive interposer and structure thereof. More particularly, the invention encompasses a hermetic cap which is secured to an aluminum nitride substrate using the novel thermal interposer. The novel thermal interposer basically comprises of layers of relatively high thermal conductive metallic materials sandwiching a core layer of low thermal conductive metallic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.