Semiconductor component with a high-voltage endurance edge structure

US6037631A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Gerald Deboy · Klagenfurt, AT
• Helmut Gassel · Farmington Hills, US
• Jens-Peer Stengl · Hersbruck, DE

Key dates

• Filing date: Sep 18, 1998
• Grant date: Mar 14, 2000
• Expiry date: Sep 18, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A semiconductor component having a high-voltage endurance edge structure in which a multiplicity of parallel-connected individual components are disposed in a multiplicity of cells of a cell array. In an edge region, the semiconductor component has cells with shaded source zone regions. During commutation of the power semiconductor component, the shaded source zone regions suppress the switching on of a parasitic bipolar transistor caused by the disproportionately large reverse flow current density. Moreover, an edge structure having shaded source zone regions can be produced very easily in technological terms, in particular in the case of self-adjusting processes, and can thus be produced cost-effectively.