Gerald Deboy
136Patents
17h-index
77Co-inventors
89Inventor score
Filing activity: Sep 18, 1998 → Jun 7, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6271562A | Semiconductor component which can be controlled by a field effect | Electricity | 89 | Expired |
| US6388287B2 | Switch mode power supply with reduced switching losses | Electricity | 76 | Expired |
| US6630698B1 | High-voltage semiconductor component | Electricity | 76 | Expired |
| US8569842B2 | Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices | Electricity | 73 | Active |
| US9673732B2 | Power converter circuit | Electricity | 44 | Active |
| US6504230B2 | Compensation component and method for fabricating the compensation component | Electricity | 35 | Expired |
| US6870201B1 | High voltage resistant edge structure for semiconductor components | Electricity | 35 | Expired |
| US9461474B2 | Power converter circuit with AC output | Emerging Cross-Sectional Technologies | 31 | Active |
| US6828609B2 | High-voltage semiconductor component | Electricity | 29 | Expired |
| US8970262B2 | Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices | Electricity | 27 | Active |
| US6649459B2 | Method for manufacturing a semiconductor component | Electricity | 25 | Expired |
| US6479876B1 | Vertical power MOSFET | Electricity | 24 | Expired |
| US7091557B2 | Semiconductor component with increased dielectric strength and/or reduced on resistance | Electricity | 21 | Expired |
| US6960798B2 | High-voltage semiconductor component | Electricity | 19 | Expired |
| US6847091B2 | Vertical semiconductor component having a reduced electrical surface field | Electricity | 19 | Expired |
| US6914297B2 | Configuration for generating a voltage sense signal in a power semiconductor component | Electricity | 17 | Expired |
| US8026704B2 | System and method for controlling a converter | Emerging Cross-Sectional Technologies | 17 | Active |
| US6465863B1 | Power diode structure | Electricity | 16 | Expired |
| US6664590B2 | Circuit configuration for load-relieved switching | Electricity | 16 | Expired |
| US6633064B2 | Compensation component with improved robustness | Electricity | 15 | Expired |
| US6037631A | Semiconductor component with a high-voltage endurance edge structure | Electricity | 15 | Expired |
| US7777278B2 | Lateral semiconductor component with a drift zone having at least one field electrode | Electricity | 14 | Active |
| US6819089B2 | Power factor correction circuit with high-voltage semiconductor component | Electricity | 14 | Expired |
| US6936866B2 | Semiconductor component | Electricity | 13 | Expired |
| US6825514B2 | High-voltage semiconductor component | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.