Measurement of the interface trap charge in an oxide semiconductor layer interface
US6037797A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 1997 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Jul 11, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2648
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of determining charge associated with traps present in a semiconductor oxide interface is described. The method includes the steps of depositing a dose of charge over a surface of the oxide and measuring a resultant value of surface potential barrier at the portion of the surface. From the measured value of surface charge and deposited charge dose a value of charge associated with the interface trap is determined. The method also includes determining space charge corresponding to the measured surface potential barrier of the portion of the substrate. With the determined space charge and known deposited charge the interface trapped charge is determined by noting that the change in interface trapped charge is related to the negative of the changes in space charge and deposited charge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.