Semiconductor Diagnostics, Inc.
14Patents
2Active
14Granted
38Portfolio score
Filing activity: Sep 26, 1994 → Aug 21, 2009 · 2 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6114865A | Device for electrically contacting a floating semiconductor wafer having an insulating film | Physics | 114 | Expired |
| US6597193B2 | Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current | Physics | 103 | Expired |
| US6680621B2 | Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current | Physics | 96 | Expired |
| US5773989A | Measurement of the mobile ion concentration in the oxide layer of a semiconductor wafer | Emerging Cross-Sectional Technologies | 94 | Expired |
| US6569691B1 | Measurement of different mobile ion concentrations in the oxide layer of a semiconductor wafer | Electricity | 55 | Expired |
| US6538462B1 | Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge | Electricity | 50 | Expired |
| US6037797A | Measurement of the interface trap charge in an oxide semiconductor layer interface | Physics | 46 | Expired |
| US6512384B1 | Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages | Physics | 31 | Expired |
| US5663657A | Determining long minority carrier diffusion lengths | Electricity | 29 | Expired |
| US7202691B2 | Non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafers | Physics | 23 | Expired |
| US6771091B2 | Method and system for elevated temperature measurement with probes designed for room temperature measurement | Physics | 6 | Expired |
| US7405580B2 | Self-calibration in non-contact surface photovoltage measurement of depletion capacitance and dopant concentration | Physics | 2 | Active |
| US6815974B1 | Determining composition of mixed dielectrics | Physics | 2 | Expired |
| US8093920B2 | Accurate measuring of long steady state minority carrier diffusion lengths | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.