Plating process for x-ray mask fabrication
US6039858A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1998 |
| Grant date | Mar 21, 2000 |
| Priority date | — |
| Expiry date | Jul 22, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S204/07
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus are provided for the electroplating on only one side of a substrate immersed in an electroplating bath comprising using a specially designed device which holds the substrate to be plated in spaced relation to an inhibitor electrode which is part of the device. To fabricate x-ray masks, a boron doped silicon substrate is secured to a dielectric clamp which clamp has a through opening which is positioned to overlie the inhibitor electrode. A cathode structure overlies the clamp and the cathode structure, substrate and clamp are secured to the device by preferably a pivotable, locking mechanism. A space is formed between the back side of the substrate and the surface of the inhibitor electrode so that plating is preferentially on the surface of the inhibitor electrode. The use of the method and apparatus minimizes plating on the backside of the substrate and provides a plated substrate on only the upper side of the substrate. The apparatus for holding the substrate comprises a plate member to which the inhibitor electrode is secured. The clamp holding the substrate is positioned overlying the inhibitor electrode and a cathode structure is secured against the pla…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.