Method of manufacturing shallow trench isolation
US6040232A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 25, 1999 |
| Grant date | Mar 21, 2000 |
| Priority date | — |
| Expiry date | Jan 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76235
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is described for manufacturing shallow trench isolation. The method comprises the steps of providing a substrate having a pad oxide layer, a mask layer, a trench penetrating through the mask layer and the pad oxide and into the substrate and a first liner oxide layer in the trench. A portion of the first liner oxide layer is stripped away to expose the bottom corner of the mask layer. A portion of the mask layer is stripped away to expose the top corner of the first oxide layer. The first liner oxide layer is removed to expose the surface of the trench. A second liner oxide layer is formed on the sidewall and the base surface of the trench and the trench is filled with an insulating material to form a shallow trench isolation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.