United Semiconductor Corp.
139Patents
0Active
139Granted
40Portfolio score
Filing activity: May 20, 1997 → Dec 9, 1999
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6200897A | Method for manufacturing even dielectric layer | Electricity | 328 | Expired |
| US6197680A | Method for forming conductive line | Electricity | 226 | Expired |
| US6207504A | Method of fabricating flash erasable programmable read only memory | Electricity | 79 | Expired |
| US6165694A | Method for preventing the formation of recesses in borophosphosilicate glass | Electricity | 76 | Expired |
| US6171909A | Method for forming a stacked gate | Electricity | 74 | Expired |
| US5899719A | Sub-micron MOSFET | Electricity | 56 | Expired |
| US6017817A | Method of fabricating dual damascene | Electricity | 50 | Expired |
| US6069058A | Shallow trench isolation for semiconductor devices | Electricity | 46 | Expired |
| US6171976A | Method of chemical-mechanical polishing | Electricity | 39 | Expired |
| US6153472A | Method for fabricating a flash memory | Electricity | 34 | Expired |
| US6159808A | Method of forming self-aligned DRAM cell | Electricity | 31 | Expired |
| US6001707A | Method for forming shallow trench isolation structure | Electricity | 31 | Expired |
| US6191004A | Method of fabricating shallow trench isolation using high density plasma CVD | Electricity | 31 | Expired |
| US5968842A | Techniques for reduced dishing in chemical mechanical polishing | Electricity | 31 | Expired |
| US6077767A | Modified implementation of air-gap low-K dielectric for unlanded via | Electricity | 28 | Expired |
| US6040232A | Method of manufacturing shallow trench isolation | Electricity | 28 | Expired |
| US5972764A | Method for manufacturing MOS transistor | Emerging Cross-Sectional Technologies | 25 | Expired |
| US6035530A | Method of manufacturing interconnect | Emerging Cross-Sectional Technologies | 25 | Expired |
| US6284677A | Method of forming fluorosilicate glass (FSG) layers with moisture-resistant capability | Electricity | 24 | Expired |
| US6063207A | Surface treatment for bonding pad | Emerging Cross-Sectional Technologies | 24 | Expired |
| US5972752A | Method of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profile | Electricity | 24 | Expired |
| US6037234A | Method of fabricating capacitor | Electricity | 23 | Expired |
| US5998259A | Method of fabricating dual cylindrical capacitor | Electricity | 22 | Expired |
| US5960285A | Flash EEPROM device | Electricity | 22 | Expired |
| US6159840A | Fabrication method for a dual damascene comprising an air-gap | Electricity | 20 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.