Process for controlling dopant diffusion in a semiconductor layer
US6043139A · kind A · utility
133Cited by
3References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 1995 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Nov 28, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/918
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Diffusion of ion-implanted dopant is controlled by incorporating electrically inactive impurity in a semiconductor layer by at least one crystal growth technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.