Process for forming a semiconductor device
US6043146A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1998 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Jul 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A buffer film (154, 164) is formed over an underlying film (153, 162) to protect that underlying film (153, 162) from damage during a removal sequence, such as polishing. Scratches, gouging, smearing that can occur to the underlying layer (153, 162) are less likely to occur because of the presence of the buffer film (154, 164). In some embodiments, an insulating film (162) is to be protected. The buffer film (164) is formed over the insulating film (162), and the insulating and buffer films (162 and 164) are patterned. During a subsequent conductive layer polishing operation in an embodiment, most of the buffer film (164) is removed. In still another embodiment, a buffer film (154) is formed over a conductive layer (153) to protect it during "gap fill" process sequence. Although residual portions of the buffer film (154, 164) are usually removed, in some instances, those residual portions can remain if there are no significant adverse affects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.