Method of purifying a metal line in a semiconductor device
US6043149A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 23, 1997 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Jul 23, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a metal line of a semiconductor device includes the steps of: forming an insulating film on a semiconductor substrate including a lower layer line; forming a via hole to partially expose the lower layer line by selectively removing the insulating film; forming a first conductivity material layer on the insulating film including the via hole; forming a plug layer by selectively removing the first conductivity material layer so that it remains only in the via hole; performing a resistance-lowering treatment on the plug layer to remove its impurities; and forming a second conductivity material layer on the insulating film including the plug layer to form an upper layer line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.