Chemical mechanical polishing process for layers of isolating materials based on silicon derivatives or silicon
US6043159A · kind A · utility
9Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1997 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Sep 30, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Process for the chemical mechanical polishing of a layer of isolating material based on silicon or a silicon derivative, in which abrasion of the layer of isolating material is carried out by rubbing said layer using a fabric which brings into play an abrasive containing an acid aqueous solution of colloidal silica containing individualized colloidal silica particles, not linked together by siloxane bonds, and water as the suspension medium and new abrasives based on such suspensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.