Method for transferring a multi-level photoresist pattern
US6043164A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1996 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Jun 10, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming an intermediate level in an integrated circuit dielectric during a damascene process using a photoresist mask having an intermediate thickness. The method forms an interconnect to a first depth in the dielectric through an opening in the photoresist pattern. The photoresist profile is partially etched away in the area of the intermediate thickness to reveal a second dielectric surface area. The second dielectric surface area is then etched to a second depth less than the first depth. In this manner, vias can be formed to the first depth, and lines can be formed at a second depth to intersect the vias. The method of the present invention allows a dual damascene process to be performed with a single step of photoresist formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.