Inventor · Vancouver, WA, US

Jer-Shen Maa

102Patents
21h-index
30Co-inventors
90Inventor score

Filing activity: Dec 9, 1982 → Mar 17, 2011

Most-cited inventions

PatentTitleAreaCited byStatus
US7115945B2 Strained silicon fin structure Electricity 321 Expired
US7419844B2 Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer Electricity 263 Active
US7800148B2 CMOS active pixel sensor Electricity 218 Active
US7045401B2 Strained silicon finFET device Electricity 170 Expired
US7598108B2 Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers Electricity 77 Active
US6441417B1 Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the same Electricity 77 Expired
US6562703B1 Molecular hydrogen implantation method for forming a relaxed silicon germanium layer with high germanium content Emerging Cross-Sectional Technologies 77 Expired
US7323349B2 Self-aligned cross point resistor memory array Electricity 58 Active
US6048740A Ferroelectric nonvolatile transistor and method of making same Electricity 58 Expired
US6703293B2 Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates Emerging Cross-Sectional Technologies 41 Expired
US6583000B1 Process integration of Si1-xGex CMOS with Si1-xGex relaxation after STI formation Electricity 40 Expired
US5830775A Raised silicided source/drain electrode formation with reduced substrate silicon consumption Emerging Cross-Sectional Technologies 35 Expired
US6767802B1 Methods of making relaxed silicon-germanium on insulator via layer transfer Electricity 34 Expired
US4411734A Etching of tantalum silicide/doped polysilicon structures Electricity 33 Expired
US7008813B1 Epitaxial growth of germanium photodetector for CMOS imagers Emerging Cross-Sectional Technologies 31 Expired
US6992025B2 Strained silicon on insulator from film transfer and relaxation by hydrogen implantation Electricity 27 Expired
US7018882B2 Method to form local “silicon-on-nothing” or “silicon-on-insulator” wafers with tensile-strained silicon Electricity 27 Expired
US5814537A Method of forming transistor electrodes from directionally deposited silicide Emerging Cross-Sectional Technologies 26 Expired
US7906825B2 Ge imager for short wavelength infrared Electricity 22 Active
US6043164A Method for transferring a multi-level photoresist pattern Electricity 22 Expired
US6903384B2 System and method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications Electricity 22 Expired
US7390725B2 Strained silicon on insulator from film transfer and relaxation by hydrogen implantation Electricity 20 Active
US7186611B2 High-density germanium-on-insulator photodiode array Emerging Cross-Sectional Technologies 20 Expired
US6190963A Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same Electricity 19 Expired
US7651880B2 Ge short wavelength infrared imager Electricity 19 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.