Bipolar silicon-on-insulator transistor with increased breakdown voltage

US6043555A · kind A · utility

Assignee

• Telefonaktiebolaget LM Ericsson (Publ) · SE

Inventors

• Andrej Litwin · Stockholm, SE
• Torkel Arnborg · Stockholm, SE

Key dates

• Filing date: Oct 10, 1997
• Grant date: Mar 28, 2000
• Expiry date: Oct 10, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/311

Abstract

In a bipolar silicon-on-insulator transistor having a substrate having a major surface, an oxide layer on the major surface, a silicon layer of a first conductivity type on the oxide layer, a base region of a second conductivity type extending into the silicon layer, an emitter region of the first conductivity type extending into the base region, and a collector region of the first conductivity type extending into the silicon layer at a lateral distance from the base region, a plug region of the second conductivity type extends into the silicon layer up to the oxide layer on the opposite side of said emitter region relative to the collector region, a portion of the plug region extends laterally along the surface of the oxide layer under at least part of the emitter region towards the collector region at a distance from the base region, and the plug region is electrically connected to the base region.