Semiconductor laser device
US6044099A · kind A · utility
3Cited by
5References
47Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1997 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Sep 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device comprises an n-type cladding layer, an active layer formed on the n-type cladding layer and having a quantum well structure including one or a plurality of quantum well layers, a p-type cladding layer comprising a flat portion formed on the active layer and a stripe-shaped ridge portion on the flat portion, and a current blocking layer formed on the flat portion so as to cover the side surface of the ridge portion and formed on a region on the upper surface of the ridge portion from one of facets of a cavity to a position at a predetermined distance therefrom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.