Integrated optics chip with reduced thermal errors due to pyroelectric effects
US6044184A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1998 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Jul 28, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/21
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated optics chip with improved performance when exposed to changing temperature is disclosed. The optic chip or integrated optics chip or MIOC has a top surface, a +Z face and -Z face. The integrated optics chip is formed from a crystal substrate having a high electro-optic coefficient such as Lithium Niobate. For the purpose of orienting the components to the optic chip to be described, the +Z crystal axis extends outward from the +Z face, the Z axis being the axis across which a pyroelectric effect is exhibited. The top surface is orthogonal to the Z axis. An input waveguide on the top surface receives an optical signal from an input port, passes the signal via a waveguide network, to an output waveguide coupling the waveguide network to an output port. A portion of the +Z and -Z faces are coated at least partially with a conductive coating. A conductive path couples the +Z and -Z faces to prevent a charge differential from developing between the +Z and -Z faces due to a change in temperature of the optic chip and the pyroelectric effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.